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-raysHishiki, Shigeomi; Oshima, Takeshi; Iwamoto, Naoya; Kawano, Katsuyasu*; Ito, Hisayoshi
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.173 - 176, 2006/10
no abstracts in English
p diodes irradiated with Au-ionsIwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.185 - 188, 2006/10
no abstracts in English
Sato, Shinichiro; Miyamoto, Haruki; Oshima, Takeshi; Imaizumi, Mitsuru*; Morioka, Chiharu*; Kawano, Katsuyasu*; Ito, Hisayoshi
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.161 - 164, 2006/10
The performance recovery of III-V solar cells irradiated with protons by current injection was investigated. InGaP/GaAs/Ge triple-junction (3J) solar cells were irradiated with 50keV protons at 1
10
or 10MeV protons at 110
ions/cm
at room temperature. Then, the recoveries of the electric (current-voltage: 
-
) characteristics of these samples were investigated by forward current (minority carrier) injection. As a result, the open circuit voltage (
) of these 3J solar cells was recovered although no significant change in their short circuit current (
) was observed due to current injection. In addition, the samples irradiated with 50keV protons were recovered compared to the ones irradiated with 10MeV protons.
Miyamoto, Haruki; Sato, Shinichiro; Oshima, Takeshi; Imaizumi, Mitsuru*; Morioka, Chiharu*; Ito, Hisayoshi; Kawano, Katsuyasu*
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.189 - 191, 2006/10
InGaP/GaAs/Ge triple-junction (3J) and Si single junction solar cells designed for space application were irradiated with 1.0 MeV- and 0.8 MeV-electrons at 110
510/cm in the atmosphere. The distance between the irradiation window and samples was changed from 20 to 50 cm. The accelerated electron energy changed from 1.0 to 0.93 MeV at the surface of samples with 20 cm below the irradiation window. This energy change caused by the energy attenuation of the Ti irradiation window and atmosphere. The electrical properties of solar cells were measured and compared before irradiation to after irradiation. No significant difference in the degradation of 3J solar cells due to electron irradiation was observed in energies range between 0.93 and 0.71 MeV. For Si solar cells, the value of degradation is the same in energies range between 0.93 and 0.87 MeV, however, the decrease in degradation was observed below 0.73 MeV.
thin-film solar cells using micro-satelliteKawakita, Shiro*; Imaizumi, Mitsuru*; Kibe, Koichi*; Oshima, Takeshi; Ito, Hisayoshi; Yoda, Shinichi*; Nakamura, Yuya*; Nakasuka, Shinichi*
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.61 - 64, 2006/10
no abstracts in English
Shimazaki, Kazunori*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi; Kibe, Koichi*
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.49 - 52, 2006/10
no abstracts in English
Matsuura, Hideharu*; Kawakita, Shiro*; Oshima, Takeshi; Ito, Hisayoshi
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.157 - 160, 2006/10
no abstracts in English
Sasaki, Takuo*; Takamoto, Tatsuya*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi; Yamaguchi, Masafumi*
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.165 - 168, 2006/10
no abstracts in English
Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi; Kibe, Koichi*
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.169 - 172, 2006/10
no abstracts in English
Matsuura, Hideharu*; Minohara, Nobumasa*; Takahashi, Miyuki*; Oshima, Takeshi; Ito, Hisayoshi
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.181 - 184, 2006/10
no abstracts in English
and heavy ion damage on the time-resolved gain of a low breakdown voltage Si avalanche photodiodeLaird, J. S.*; Onoda, Shinobu; Hirao, Toshio; Becker, H.*; Johnston, A.*; Ito, Hisayoshi
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.37 - 40, 2006/10
no abstracts in English
Onoda, Shinobu; Oshima, Takeshi; Hirao, Toshio; Hishiki, Shigeomi; Mishima, Kenta; Iwamoto, Naoya; Kamiya, Tomihiro; Kawano, Katsuyasu*
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.115 - 118, 2006/10
no abstracts in English
m fully depleted CMOS/SOI digital logic devicesMakihara, Akiko*; Asai, Hiroaki*; Tsuchiya, Yoshihisa*; Amano, Yukio*; Midorikawa, Masahiko*; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Onoda, Shinobu; Hirao, Toshio; Nakajima, Yasuhito*; et al.
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.95 - 98, 2006/10
no abstracts in English
Hanaya, Hiroaki; Kaneko, Hirohisa; Haneda, Noriyuki; Yamagata, Ryohei; Seito, Hajime; Kojima, Takuji; Yamaguchi, Toshiyuki*; Kawashima, Ikuo*; Yagi, Norihiko*; Takagi, Masahide*
no journal, ,
no abstracts in English